Infrared Diagnostics of Free Charge Carriers in Silicon Nanowires

被引：1
|
作者：
Efimova, A., I [1 ]
Lipkova, E. A. [1 ]
Gonchar, K. A. [1 ]
Eliseev, A. A. [2 ]
Timoshenko, V. Yu [1 ,3 ,4 ]
机构：
[1] Moscow MV Lomonosov State Univ, Phys Dept, Leninskie Gory 1, Moscow 119991, Russia
[2] Moscow MV Lomonosov State Univ, Dept Mat Sci, Leninskie Gory 1, Moscow 119991, Russia
[3] RAS, Lebedev Phys Inst, Leninsky Ave 53, Moscow 119991, Russia
[4] Natl Res Nucl Univ MEPhI, PhysBio Inst, Kashirskoe Sh 31, Moscow 115409, Russia
来源：
INTERNATIONAL JOURNAL OF NANOSCIENCE | 2019年 / 18卷 / 3-4期
关键词：
Doped silicon nanowire arrays; metal-assisted chemical etching; attenuated total reflection;
D O I：
10.1142/S0219581X19400301
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Free charge carrier concentration in arrays of silicon nanowires (SiNWs) with cross-sectional size of the order of 100 nm was quantitatively studied by means of the infrared spectroscopy in an attenuated total reflection mode. SiNWs were formed on lightly-doped p-type crystalline silicon substrates by metal-assisted chemical etching followed by additional doping through thermo-activated diffusion of boron at 900-1000 degrees C. The latter process was found to increase the concentration of free holes in SiNWs up to (1-3) x 10(19) cm(-3). Potential applications of highly doped SiNWs in thermoelectric energy converters and infrared plasmonic devices are discussed.
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页数：4
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