Effect of electronic resistance and water content on the performance of RuO2 for supercapacitors

被引:57
作者
Barbieri, O. [1 ]
Hahn, M. [1 ]
Foelske, A. [1 ]
Koetz, R. [1 ]
机构
[1] Paul Scherrer Inst, Electrochem Lab, CH-5232 Villigen, Switzerland
关键词
D O I
10.1149/1.2338633
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Hydrous ruthenium oxide, RuO2 center dot H2O, was prepared according to a sol-gel process and annealed at different temperatures. The importance of high electronic conductivity for high capacity in aqueous 3 M H2SO4 was revealed through two approaches. The electronic resistivity of RuO2 center dot H2O measured in situ as a function of the electrode potential shows a marked increase toward low potentials. This trend is more pronounced for the low-temperature annealed oxide (T <= 150 degrees C) where it results in a limitation of the capacitance at E < 0.4 V vs reversible hydrogen electrode. This finding is in line with the steep rise of the electrochemical impedance in the same potential region. A possible way to overcome this limitation is to mix two differently heat treated oxides, one with high conductivity (T=300 degrees C, Z300), the other with optimum capacity (T=150 degrees C, Z150). The observed specific capacity increase of hydrous RuO2 in the mixture from 738 to 982 F/g is attributed to an improvement of the electronic pathway along the particles of high-temperature-treated RuO2 (Z300) toward the high-capacity Z150 particles. (c) 2006 The Electrochemical Society.
引用
收藏
页码:A2049 / A2054
页数:6
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