Intrinsic and Doped Zinc Oxide Nanowires for Transparent Electrode Fabrication via Low-Temperature Solution Synthesis

被引：29

作者：

Goris, L. ^{[1
]}

Noriega, R. ^{[2
]}

Donovan, M. ^{[2
]}

Jokisaari, J. ^{[3
]}

Kusinski, G. ^{[3
]}

Salleo, A. ^{[1
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[3] Clemson Univ, Sch Mat Sci & Engn, Clemson, SC 29634 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2009年 / 38卷 / 04期

关键词：

Zinc oxide; nanowire; transparent electrode; doping; NANOSTRUCTURES; ZNO; GROWTH;

D O I：

10.1007/s11664-008-0618-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Undoped and doped zinc oxide (ZnO) nanowires were synthesized by decomposing metal salts in trioctylamine at 300A degrees C. By adding metal salts during the formation of the wires, effective incorporation of Ga and Al up to 5% was achieved, as measured by energy-dispersive x-ray spectroscopy and Auger electron spectroscopy. No secondary phase was detected by high-resolution transmission electron microscopy and x-ray diffraction. The nanowires were single-crystalline with a wurtzite lattice structure. Films made with doped wires show a complex dependence of the sheet resistance on processing conditions and dopant concentration. Thermal annealing treatment reduced the sheet resistance to values of 10(3) Omega/square.

引用

页码：586 / 595

页数：10

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