All-polymer field effect transistors

被引：0
|
作者：
Schrödner, M [1 ]
Sensfuss, S [1 ]
Roth, HK [1 ]
Stohn, RI [1 ]
Clemens, W [1 ]
Bernds, A [1 ]
机构：
[1] Thuering Inst Text & Kunststoff Forsch EV, D-07407 Rudolstadt, Germany
来源：
POLYTRONIC 2002: 2ND INTERNATIONAL IEEE CONFERENCE ON POLYMERS AND ADHESIVES IN MICROELECTRONICS AND PHOTONICS, CONFERENCE PROCEEDINGS | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polymer field effect transistors (PFETs) were made from polymeric semiconductors, insulators and electrodes on flexible polymeric substrates. The authors present recent results of all-polymer FETs with conjugated polymers like poly(3-alkylthiophenes) as active semiconducting material. Highly resolved electrodes were patterned by lithography of conducting polymers. The on/off ratios exceed 1000 by far. The logic capability of the PFETs could be demonstrated by the realisation of inverters.
引用
收藏
页码：188 / 190
页数：3
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