Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes

被引：98

作者：

Prakash, Nisha ^{[1
,2
]}

Singh, Manjri ^{[1
,2
]}

Kumar, Gaurav ^{[1
]}

Barvat, Arun ^{[1
,2
]}

Anand, Kritika ^{[1
,2
]}

Pal, Prabir ^{[1
,2
]}

Singh, Surinder P. ^{[1
]}

Khanna, Suraj P. ^{[1
]}

机构：

[1] CSIR Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, India

[2] CSIR Natl Phys Lab Campus, Acad Sci & Innovat Res AcSIR, Dr KS Krishnan Rd, New Delhi 110012, India

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 24期

关键词：

ULTRAVIOLET SENSORS; DETECTORS; DIODES;

D O I：

10.1063/1.4971982

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simplistic design of a self-powered UV-photodetector device based on hybrid reduced-graphene-oxide (r-GO)/gallium nitride (GaN) is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of similar to 85% while the ohmic contact GaN photodetector with an identical device structure exhibits only similar to 5.3% photosensivity at 350 nm illumination (18 mu W/cm(2)). The responsivity and detectivity of the hybrid device were found to be 1.54mA/W and 1.45 x 10(10) Jones (cm Hz(1/2) W-1), respectively, at zero bias with fast response (60 ms), recovery time (267 ms), and excellent repeatability. Power density-dependent responsivity and detectivity revealed ultrasensitive behaviour under low light conditions. The source of the observed self-powered effect in the hybrid photodetector is attributed to the depletion region formed at the r-GO and GaN quasi-ohmic interface. Published by AIP Publishing.

引用

页数：5

共 29 条

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