Challenges in modeling of bulk crystal growth

被引：39

作者：

Müller, G

Friedrich, J

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci WW6, Crystal Growth Lab, D-91058 Erlangen, Germany

[2] Fraunhofer Inst IISB, Dept Crystal Growth, D-91058 Erlangen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 266卷 / 1-3期

关键词：

computer simulation; convection; defects; radiation; solidification;

D O I：

10.1016/j.jcrysgro.2004.02.024

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper tries to analyze some of the presently existing problems and challenges in the field of modeling bulk crystal growth processes. Strategies will be discussed to meet and overcome these problems and challenges. The different topics will be illustrated by typical examples of bulk growth of serniconductor and optical crystals. Experimental results will be used for a comparison and validation of the numerical results in order to demonstrate the status and maturity of the models. The following topics are considered: modeling of transport phenomena and three-dimensional effects, process optimization by soft computing, modeling of defect formation and finally the speed-up of computations by using PC clusters and paralellization. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：1 / 19

页数：19

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