Correlated Band-Edge Emissions of ZnO Nanorods and GaN Underlying Substrate

被引：3

作者：

Ning, Jiqiang ^{[1
,2
]}

Xu, Shijie ^{[1
,2
]}

Wang, Rongxin ^{[3
]}

Zhang, Fan ^{[1
,2
]}

Le, Hongquang ^{[4
]}

Chua, Soojin ^{[4
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Univ Hong Kong, HKU CAS Joint Lab New Mat, Hong Kong, Hong Kong, Peoples R China

[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China

[4] Natl Univ Singapore, Singapore MIT Alliance, Singapore 117576, Singapore

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 02期

关键词：

OPTICAL-PROPERTIES; VAPOR-DEPOSITION; DOPED GAN; LUMINESCENCE; EXCITON; GROWTH; PHOTOLUMINESCENCE; TEMPERATURE; NANOWIRES;

D O I：

10.1143/JJAP.48.021102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertically aligned ZnO nanorods were grown on GaN substrate with hydrothermal method. Under the excitation of continuous-wave ultraviolet laser, the band-edge emission of the ZnO nanorods exhibits a strong intensity fluctuation with time at low temperatures. More interestingly, it has a distinct correlation with the band-edge emission of the GaN underlying layer. The correlation coefficient is found to be as high as -0.94. The results reveal the presence of random and efficient carrier transfer between the ZnO nanorods and GaN underlying substrate. (C) 2009 The Japan Society of Applied Physics

引用

页数：4

共 29 条

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