Structural, morphological and optical properties of Nickel-doped SnO2 nanostructure materials prepared by the sol-gel method under different heat treatments

被引:0
作者
Djamil, Rechem [1 ,2 ]
Aicha, Khial [1 ]
Salma, Kaour [1 ]
Benzitouni, Sara [1 ]
机构
[1] Univ Larbi Ben Mhidi Oum El Bouaghi, Lab Act Components & Mat, Oum El Bouaghi, Algeria
[2] Univ Larbi Ben Mhidi Oum El Bouaghi, Dept Elect Engn, Fac Sci & Appl Sci, Oum El Bouaghi, Algeria
来源
2016 39TH INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS) | 2016年
关键词
nanostructure material; tin oxide; SnO2: Ni; sol gel; dip-coating; ANNEALING TEMPERATURE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents a detailed study of the influence of different annealing temperatures on the structural, morphological and optical properties 5 wt% Ni doped SnO2 thin films. Ni doped SnO2 thin films were deposited by sol gel method on glass substrates and then annealed at different temperature. Structural and morphological investigations were carried out on all samples by X-ray diffraction method and atomic force microscopy while Optical properties were obtained with UV-Visible spectrophotometer. Structural analysis showed that all films are polycrystalline with rutile phase and preferred orientation (110) which improves with increasing the annealing temperature. The grain size is calculated by the Scherrer method ranges from 3.9 nm to 9.13 nm. AFM images showed that Ni doped SnO2 thin films have a smooth surface morphology with nanostructure surface roughness in the range of 12 to 25 nm. The optical properties in the visible range showed that the deposited layers have a high transmission factor. An average transmittance of > 75% was observed for all the films. The optical band gap energy vary in the range of 3.89 - 4.02 eV with the increase in annealing temperature.
引用
收藏
页码:169 / 172
页数:4
相关论文
共 19 条
[1]   Influence of aging time of the starting solution on the physical properties of fluorine doped zinc oxide films deposited by a simplified spray pyrolysis technique [J].
Anandhi, R. ;
Mohan, R. ;
Swaminathan, K. ;
Ravichandran, K. .
SUPERLATTICES AND MICROSTRUCTURES, 2012, 51 (05) :680-689
[2]   The effect of the post-annealing temperature on the nano-structure and energy band gap of SnO2 semiconducting oxide nano-particles synthesized by polymerizing-complexing sol-gel method [J].
Bagheri-Mohagheghi, M-M ;
Shahtahmasebi, N. ;
Alinejad, M. R. ;
Yousseffi, A. ;
Shokooh-Saremi, M. .
PHYSICA B-CONDENSED MATTER, 2008, 403 (13-16) :2431-2437
[3]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[4]   Investigation of structural and magnetic properties of nanoscale Cu doped SnO2: An experimental and density functional study [J].
Chetri, Pawan ;
Choudhury, Amarjyoti .
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 627 :261-267
[5]   Characterization of nanocrystalline SnO2 thin film fabricated by electrodeposition method for dye-sensitized solar cell application [J].
El-Etre, A. Y. ;
Reda, S. M. .
APPLIED SURFACE SCIENCE, 2010, 256 (22) :6601-6606
[6]   Role of annealing temperature on electrical and optical properties of Al-doped ZnO thin films [J].
Gurbuz, Osman ;
Guner, Sadik .
CERAMICS INTERNATIONAL, 2015, 41 (03) :3968-3974
[7]   Relationship between the structural and magnetic properties of Co-doped SnO2 nanoparticles -: art. no. 075203 [J].
Hays, J ;
Punnoose, A ;
Baldner, R ;
Engelhard, MH ;
Peloquin, J ;
Reddy, KM .
PHYSICAL REVIEW B, 2005, 72 (07)
[8]   Effect of Ni doping on thick film SnO2 gas sensor [J].
Jain, K ;
Pant, RP ;
Lakshmikumar, ST .
SENSORS AND ACTUATORS B-CHEMICAL, 2006, 113 (02) :823-829
[9]   Raman spectra, photoluminescence and ferromagnetism of pure, Co and Fe doped SnO2 nanoparticles [J].
Kaur, Jasneet ;
Shah, Jyoti ;
Kotnala, R. K. ;
Verma, Kuldeep Chand .
CERAMICS INTERNATIONAL, 2012, 38 (07) :5563-5570
[10]   Size-controlled electrochemical synthesis and properties of SnO2 nanotubes [J].
Lai, Min ;
Lim, Jae-Hong ;
Mubeen, Syed ;
Rheem, Youngwoo ;
Mulchandani, Ashok ;
Deshusses, Marc A. ;
Myung, Nosang V. .
NANOTECHNOLOGY, 2009, 20 (18)