AlGaN ultraviolet photodetectors grown by molecular beam epitaxy on Si(111) substrates

被引：42

作者：

Pau, JL ^{[1
]}

Monroy, E ^{[1
]}

Sánchez-García, MA ^{[1
]}

Calleja, E ^{[1
]}

Muñoz, E ^{[1
]}

机构：

[1] Univ Politecn Madrid, ETSI Telecomunicac, Dept Ingn Elect, E-28040 Madrid, Spain

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 93卷 / 1-3期

关键词：

metal-semiconductor metal; III-nitrides; UV photodetectors; molecular beam epitaxy;

D O I：

10.1016/S0921-5107(02)00051-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The performance of AlGaN metal-semiconductor-metal (MSM) photodetectors grown on Si(111) is presented in this article. It is shown that the growth of an adequate AlN buffer layer is critical to achieve visible-blind devices, and that its role as an effective electrical insulator of the conductive substrate was found to be more efficient for N-excess AlN growth. The increase of Al content produced a transition from photoconductor to MSM photodiode behaviour, as determined from the detector responsivity, temporal response, and UV/visible contrast. The effect of the contact metal on photoconductive gain and UV/visible contrast was also studied. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：159 / 162

页数：4

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