In-situ surface-roughness measurements during the preparation of chemically etched porous silicon

被引：3

作者：

Harris, PJ ^{[1
]}

Bayliss, SC

Bardrick, T

Hillman, R

Cubitt, R

机构：

[1] De Montfort Univ, Solid State Res Ctr, Leicester LE1 9BH, Leics, England

[2] Univ Leicester, Dept Chem, Leicester LE1 7RH, Leics, England

[3] ILL, Grenoble, France

来源：

JOURNAL OF POROUS MATERIALS | 2000年 / 7卷 / 1-3期

关键词：

stain etching; porous silicon; neutron reflection;

D O I：

10.1023/A:1009638504564

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

We have monitored the stain-etching of silicon in real time using neutron reflection. The etching process does not occur uniformly with time and possible dynamics of the process is under consideration. Distinct irregularities are produced on the PS surface and some gas bubbling from the cell is observed.

引用

页码：47 / 49

页数：3