InP-HEMT MMICs FOR PASSIVE MILLIMETER-WAVE IMAGING SENSORS

被引：0

作者：

Sato, M. ^{[1
]}

Hirose, T. ^{[1
]}

Ohki, T. ^{[1
]}

Takahashi, T. ^{[1
]}

Makiyama, K. ^{[1
]}

Hara, N. ^{[1
]}

Sato, H. ^{[2
]}

Sawaya, K. ^{[2
]}

Mizuno, K. ^{[2
]}

机构：

[1] Fujitsu Ltd, Atsugi, Kanagawa, Japan

[2] Tohoku Univ, Sendai, Miyagi, Japan

来源：

2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年

关键词：

flip chip bonding; HEMT; inverted microstrip line; linearly tapered slot antenna; LNA; PMMW;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes InP-HEMT MMICs for 94 GHz band passive millimeter-wave (PMMW) imaging sensors. In order to obtain high sensitivity with a single MMIC, we developed a new structure in MMIC to suppress unwanted feedback power that causes amplifier instability. The structure is also suited for flip chip bonding (FCB). The measured sensitivity of the MMIC was over 500,000 V/W at the frequency of 94 GHz. We also developed the RF front-end of the PMMW imager by mounting the MMIC on an antenna substrate by FCB assembly. In addition, we demonstrated examples of a millimeter-wave image acquired by the PMMW imager.

引用

页码：601 / +

页数：2

共 8 条

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