Confinement of Ferroelectric Domain-Wall Motion at Artificially Formed Conducting-Nanofilaments in Epitaxial BiFeO3 Thin Films

被引：21
|
作者：
Kim, Woo-Hee [1 ]
Son, Jong Yeog [2 ]
Jane, Hyun Myung [3 ,4 ]
机构：
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Kyung Hee Univ, Coll Appl Sci, Dept Appl Phys, Yongin 446701, South Korea
[3] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea
[4] Pohang Univ Sci & Technol POSTECH, Dept Phys, Pohang 790784, South Korea
来源：
ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
BiFeO3 thin film; ferroelectric response; resistive switching; conducting-filament; domain-wall motion; ELECTRICAL-PROPERTIES; LA SUBSTITUTION; RESOLUTION; BEHAVIOR;
D O I：
10.1021/am501630k
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report confinement of ferroelectric domain-wall motion at conducting-nanofilament wall in epitaxial BiFeO3 thin film on Nb-doped SrTiO3 substrate. The BiFeO3 film exhibited well-defined ferroelectric response and unipolar resistive switching behavior. We artificially formed conducting-nanofilaments in the BiFeO3 via conducting atomic force microscope techniques. The conducting-nanofilament wall, which does not possess any ferroelectric polarization, is then able to block domain propagation. Consequently, we demonstrate that the domain-wall motion is effectively confined within the conducting-nanofilament wall during polarization switching. This significant new insight potentially gives an opportunity for the artificial manipulation of nanoscale ferroelectric domain.
引用
收藏
页码：6346 / 6350
页数：5
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