共 23 条
Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization
被引:52
作者:
Cervera, C.
[1
]
Rodriguez, J. B.
[1
]
Perez, J. P.
[1
]
Ait-Kaci, H.
[1
]
Chaghi, R.
[1
]
Konczewicz, L.
[2
]
Contreras, S.
[2
]
Christol, P.
[1
]
机构:
[1] Univ Montpellier 2, CNRS, UMR 5214, IES, F-34095 Montpellier 05, France
[2] Univ Montpellier 2, Etud Semicond Grp, CNRS, UMR 5650, F-34095 Montpellier 5, France
关键词:
carrier density;
carrier mobility;
gallium compounds;
Hall effect;
III-V semiconductors;
indium compounds;
molecular beam epitaxial growth;
photodiodes;
semiconductor superlattices;
GASB;
INTERFACE;
INAS;
PERFORMANCE;
DETECTORS;
D O I:
10.1063/1.3191175
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process which, thanks to the suppression of substrate, allows direct Hall measurement on superlattice structures grown on conductive GaSb substrate. Two samples were used to characterize the transport: one grown on a semi-insulating GaAs substrate and another grown on n-GaSb substrate where a etch stop layer was inserted to remove the conductive substrate. Mobilities and carrier concentrations have been measured as a function of temperature (77-300 K), and compared with capacitance-voltage characteristic at 80 K of a photodiode comprising a similar nid superlattice.
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