Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization

被引:52
作者
Cervera, C. [1 ]
Rodriguez, J. B. [1 ]
Perez, J. P. [1 ]
Ait-Kaci, H. [1 ]
Chaghi, R. [1 ]
Konczewicz, L. [2 ]
Contreras, S. [2 ]
Christol, P. [1 ]
机构
[1] Univ Montpellier 2, CNRS, UMR 5214, IES, F-34095 Montpellier 05, France
[2] Univ Montpellier 2, Etud Semicond Grp, CNRS, UMR 5650, F-34095 Montpellier 5, France
关键词
carrier density; carrier mobility; gallium compounds; Hall effect; III-V semiconductors; indium compounds; molecular beam epitaxial growth; photodiodes; semiconductor superlattices; GASB; INTERFACE; INAS; PERFORMANCE; DETECTORS;
D O I
10.1063/1.3191175
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process which, thanks to the suppression of substrate, allows direct Hall measurement on superlattice structures grown on conductive GaSb substrate. Two samples were used to characterize the transport: one grown on a semi-insulating GaAs substrate and another grown on n-GaSb substrate where a etch stop layer was inserted to remove the conductive substrate. Mobilities and carrier concentrations have been measured as a function of temperature (77-300 K), and compared with capacitance-voltage characteristic at 80 K of a photodiode comprising a similar nid superlattice.
引用
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页数:4
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