Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization

被引：52

作者：

Cervera, C. ^{[1
]}

Rodriguez, J. B. ^{[1
]}

Perez, J. P. ^{[1
]}

Ait-Kaci, H. ^{[1
]}

Chaghi, R. ^{[1
]}

Konczewicz, L. ^{[2
]}

Contreras, S. ^{[2
]}

Christol, P. ^{[1
]}

机构：

[1] Univ Montpellier 2, CNRS, UMR 5214, IES, F-34095 Montpellier 05, France

[2] Univ Montpellier 2, Etud Semicond Grp, CNRS, UMR 5650, F-34095 Montpellier 5, France

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 03期

关键词：

carrier density; carrier mobility; gallium compounds; Hall effect; III-V semiconductors; indium compounds; molecular beam epitaxial growth; photodiodes; semiconductor superlattices; GASB; INTERFACE; INAS; PERFORMANCE; DETECTORS;

D O I：

10.1063/1.3191175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process which, thanks to the suppression of substrate, allows direct Hall measurement on superlattice structures grown on conductive GaSb substrate. Two samples were used to characterize the transport: one grown on a semi-insulating GaAs substrate and another grown on n-GaSb substrate where a etch stop layer was inserted to remove the conductive substrate. Mobilities and carrier concentrations have been measured as a function of temperature (77-300 K), and compared with capacitance-voltage characteristic at 80 K of a photodiode comprising a similar nid superlattice.

引用

页数：4

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