A p-channel SMC poly-Si thin film-transistor with a GOLDD structure

被引：3

作者：

Son, YD ^{[1
]}

Cho, KS ^{[1
]}

Yoo, SY ^{[1
]}

Kwak, JU ^{[1
]}

Kim, KH ^{[1
]}

Jang, J ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

来源：

CURRENT APPLIED PHYSICS | 2002年 / 2卷 / 04期

关键词：

GOLDD; leakage current; SMC polycrystalline TFT;

D O I：

10.1016/S1567-1739(02)00095-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed a silicide-mediated crystallization (SMC) polycrystalline silicon (poly-Si) thin film transistor (TFT) with a gate overlapped lightly doped drain (GOLDD) structure. Applying a GOLDD structure to the SMC poly-Si TFT, the off-state leakage current of coplanar TFT is reduced, while the reduction of the on-state current is relatively small. The p-channel poly-Si TFT with a GOLDD structure exhibited a field effect mobility of 50 cm(2)/V s and an off-state leakage current of 3.8 x 10(-11) A/mum at the drain voltage of -5 V and the gate voltage of 10 V. (C) 2002 Published by Elsevier Science B.V.

引用

页码：269 / 272

页数：4

共 13 条

[1]

AYRES JR, 1998, IDW 98, P127

[2]

BATSTONE JL, 1994, SOLID STATE PHENOM, V37, P257

[3] DEPENDENCE OF RESISTIVITY ON DOPING LEVEL OF POLYCRYSTALLINE SILICON [J].