Efficient and Sustained Photoelectrochemical Water Oxidation by Cobalt Oxide/Silicon Photoanodes with Nanotextured Interfaces

被引：200

作者：

Yang, Jinhui ^{[1
,2
]}

Walczak, Karl ^{[1
,2
]}

Anzenberg, Eitan ^{[1
,2
]}

Toma, Francesca M. ^{[1
,3
]}

Yuan, Guangbi ^{[4
]}

Beeman, Jeffrey ^{[1
,2
]}

Schwartzberg, Adam ^{[5
]}

Lin, Yongjing ^{[1
,2
,6
]}

Hettick, Mark ^{[1
,2
,6
]}

Javey, Ali ^{[1
,6
]}

Ager, Joel W. ^{[1
,2
]}

Yano, Junko ^{[1
,4
]}

Frei, Heinz ^{[1
,4
]}

Sharp, Ian D. ^{[1
,4
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, JCAP, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Chem Sci, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Phys Biosci Div, Berkeley, CA 94720 USA

[5] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA

[6] Univ Calif Berkeley, Berkeley, CA 94720 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2014年 / 136卷 / 17期

关键词：

ATOMIC LAYER DEPOSITION; SILICON PHOTOANODES; THIN-FILMS; PERFORMANCE; ELECTRODES; STABILITY; CATALYST;

D O I：

10.1021/ja501513t

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Plasma-enhanced atomic layer deposition of cobalt oxide onto nanotextured p(+)n-Si devices enables efficient photoelectrochemical water oxidation and effective protection of Si from corrosion at high pH (pH 13.6). A photocurrent density of 17 mA/cm(2) at 1.23 V vs RHE, saturation current density of 30 mA/cm(2), and photo-voltage greater than 600 mV were achieved under simulated solar illumination. Sustained photoelectrochemical water oxidation was observed with no detectable degradation after 24 h. Enhanced performance of the nanotextured structure, compared to planar Si, is attributed to a reduced silicon oxide thickness that provides more intimate interfacial contact between the light absorber and catalyst. This work highlights a general approach to improve the performance and stability of Si photo-electrodes by engineering the catalyst/semiconductor interface.

引用

页码：6191 / 6194

页数：4

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