Improving purity and size of single-crystal diamond plates produced by high-rate CVD growth and lift-off process using ion implantation

被引：91

作者：

Mokuno, Y. ^{[1
]}

Chayahara, A. ^{[1
]}

Yamada, H. ^{[1
]}

Tsubouchi, N. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Diamond Res Ctr, Osaka 5638577, Japan

来源：

关键词：

Diamond; Microwave plasma CVD; High-rate growth; Ion implantation; Lift-off; Freestanding plate; RATE HOMOEPITAXIAL GROWTH; MICROWAVE PLASMA CVD; NITROGEN ADDITION; DEPOSITION; FILMS;

D O I：

10.1016/j.diamond.2009.04.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The lift-off process using ion implantation has recently been applied to produce large and thick single-crystal diamond plates by chemical vapor deposition (CVD). CVD growth conditions for undoped, as opposed to nitrogen-doped, diamond were investigated to improve the purity of plates produced by this technique. This utilized apparatus identical to that for high-rate growth with nitrogen addition under high-density plasma. By lowering the growth temperature to 900 degrees C an undoped single-crystal CVD diamond plate with a maximum length of 9 mm and thickness of 0.47 mm was successfully produced without formation of non-epitaxial crystallites. The UV-Vis-NIR transmission spectrum of this plate was identical to high-pressure high-temperature (HPHT) synthetic IIa diamond, suggesting high purity of the plate. To increase the size of single-crystal CVD diamond plates, a process to enlarge the seed crystal by combining the lift-off process and a side-surface growth technique is proposed. By this process, a half-inch single-crystal CVD diamond seed crystal was successfully synthesized and half-inch freestanding single-crystal CVD diamond plates were produced from the seed. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1258 / 1261

页数：4

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