Single-mode 2.4 μm InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing

被引：45

作者：

Gupta, J. A. ^{[1
]}

Barrios, P. J. ^{[1
]}

Lapointe, J. ^{[1
]}

Aers, G. C. ^{[1
]}

Storey, C. ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 04期

关键词：

aluminium compounds; chromium; diffraction gratings; distributed feedback lasers; gallium arsenide; gas sensors; III-V semiconductors; indium compounds; laser modes; molecular beam epitaxial growth; semiconductor device models; semiconductor growth; semiconductor lasers; semiconductor quantum wells; BEAM EPITAXY GROWTH; ABSORPTION-SPECTROSCOPY; ROOM-TEMPERATURE; DIODE-LASERS;

D O I：

10.1063/1.3189814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-mode laser diodes on GaSb substrates were developed using InGaAsSb/AlGaAsSb triple quantum well active regions grown by molecular beam epitaxy. The devices were fabricated using lateral Cr gratings, with a grating pitch designed to coincide with a strong absorption feature of HF gas, deposited adjacent to a dry-etched narrow ridge waveguide. High sidemode suppression was achieved, and in 20 degrees C continuous-wave operation, devices with a 400 mu m long cavity provided 9 mW total output power at the 2396 nm target wavelength. High-resolution direct absorption measurements of HF gas agreed with HiTran calculations, yielding an absorption linewidth of 0.030 nm.

引用

页数：3

共 16 条

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