Negative exchange interactions in coupled few-electron quantum dots

被引:16
作者
Deng, Kuangyin [1 ]
Calderon-Vargas, F. A. [1 ]
Mayhall, Nicholas J. [2 ]
Barnes, Edwin [1 ]
机构
[1] Virginia Tech, Dept Phys, Blacksburg, VA 24061 USA
[2] Virginia Tech, Dept Chem, Blacksburg, VA 24061 USA
关键词
TRIPLET OSCILLATIONS; HYBRID QUBIT; SPIN QUBIT; SILICON; FIDELITY; GATE; MICROMAGNET; TOMOGRAPHY;
D O I
10.1103/PhysRevB.97.245301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
It has been experimentally shown that negative exchange interactions can arise in a linear three-dot system when a two-electron double quantum dot is exchange coupled to a larger quantum dot containing on the order of one hundred electrons. The origin of this negative exchange can be traced to the larger quantum dot exhibiting a spin tripletlike rather than singletlike ground state. Here we show using a microscopic model based on the configuration interaction (CI) method that both tripletlike and singletlike ground states are realized depending on the number of electrons. In the case of only four electrons, a full CI calculation reveals that tripletlike ground states occur for sufficiently large dots. These results hold for symmetric and asymmetric quantum dots in both Si and GaAs, showing that negative exchange interactions are robust in few-electron double quantum dots and do not require large numbers of electrons.
引用
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页数:7
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