Balanced Microstrip AlGaN/GaN HEMT Power Amplifier MMIC for X-Band Applications

被引：5

作者：

Kuehn, J. ^{[1
]}

van Raay, F. ^{[1
]}

Quay, R. ^{[1
]}

Kiefer, R. ^{[1
]}

Bronner, W. ^{[1
]}

Seelmann-Eggebert, M. ^{[1
]}

Schlechtweg, M. ^{[1
]}

Mikulla, M. ^{[1
]}

Ambacher, O. ^{[1
]}

Thumm, M. ^{[2
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany

[2] Univ Karlsruhe, Inst Hochfrequenztech & Eleckt, D-76131 Karlsruhe, Germany

来源：

2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2008年

关键词：

D O I：

10.1109/EMICC.2008.4772237

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a balanced AlGaN/GaN HEMT single-stage power amplifier demonstrator for X-band frequencies in microstrip line technology on thinned s.i. SiC substrates. The design features a modular circuit concept and microstrip MMIC directional couplers with low impedance levels. These 3 dB-couplers designed for a center frequency of 10 GHz show a coupling factor of 3.5 dB 0.4 dB and a low net insertion loss of 0.3 dB. The balanced amplifier reaches 11 W pulsed output power at 3 dB compression level and a maximum gain of 10 dB at 8.56 GHz with an input and output match of better than 14 dB from 8.3 to 13 GHz. This 0 degrees/90 degrees balanced microstrip AlGaN/GaN HEMT power amplifier MMIC demonstrator may be an interesting alternative to existing hybrid solutions.

引用

页码：95 / +

页数：2

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