Kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces

被引：13
作者：
Choi, Soojeong [1 ]
Kim, Tong-Ho
Brown, April
Everitt, Henry O.
Losurdo, Maria
Bruno, Giovanni
Moto, Akihiro
机构：
[1] Duke Univ, Dept Phys, Durham, NC 27708 USA
[2] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA
[3] CNR, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy
[4] INSTM, I-70126 Bari, Italy
[5] Innovat Core SEI Inc, Santa Clara, CA 95051 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 18期
关键词：
D O I：
10.1063/1.2372744
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In situ spectroscopic ellipsometry kinetic characterization is used to monitor the behavior of Ga atoms during and after Ga flux impingement upon a (0001) GaN surface at various temperatures in the range of 680 - 750 S degrees C. The observed saturation of the pseudodielectric function verifies the existence of a critical thickness for the Ga wetting layer, while the observed desorption delay after the Ga flux is terminated indicates the presence of two Ga phases, one acting as a Ga reservoir to compensate the desorption of the wetting layer until the other phase is depleted. (c) 2006 American Institute of Physics.
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