High Color Rendering Index of Remote-type White LEDs with Multi-Layered Quantum Dot-Phosphor Films and Short-Wavelength Pass Dichroic Filters

被引:1
作者
Yoon, Hee Chang [1 ]
Oh, Ji Hye [1 ]
Do, Young Rag [1 ]
机构
[1] Kookmin Univ, Dept Chem, Seoul 136702, South Korea
来源
THIRTEENTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING | 2014年 / 9190卷
关键词
White Light Emitting Diodes (W-LED); Quantum dot (QD); Short-wavelength pass dichroic filter (SPDF); Color rendering index (CRI); NANOCRYSTALS; LIGHT;
D O I
10.1117/12.2061511
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper introduces high color rendering index (CRI) white light-emitting diodes (W-LEDs) coated with red emitting (Sr,Ca)AlSiN3:Eu phosphors and yellowish-green emitting AgIn5S8/ZnS (AIS/ZS) quantum dots (QDs) on glass or a short-wavelength pass dichroic filter (SPDF), which transmit blue wavelength regions and reflect yellow wavelength regions. The red emitting (Sr, Ca) AlSiN3:Eu phosphor film is coated on glass and a SPDF using a screen printing method, and then the yellowish-green emitting AIS/ZS QDs are coated on the red phosphor (Sr, Ca) AlSiN3:Eu film-coated glass and SPDF using the electrospray (e-spray) method. To fabricate the red phosphor film, the optimum amount of phosphor is dispersed in a silicon binder to form a red phosphor paste. The AIS/ZS QDs are mixed with dimethylformamide (DMF), toluene, and poly(methyl methacrylate) (PMMA) for the e-spray coating. The substrates are spin-coated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) to fabricate a conductive surface. The CRI of the white LEDs is improved through inserting the red phosphor film between the QD layer and the glass substrate. Furthermore, the light intensities of the multi-layered phosphor films are enhanced through changing the glass substrate to the SPDF. The correlated color temperatures (CCTs) vary as a function of the phosphor concentration in the phosphor paste. The optical properties of the yellowish-green AIS/ZS QDs and red (Sr, Ca) AlSiN3:Eu phosphors are characterized using photoluminescence (PL), and the multi-layered QD-phosphor films are measured using electroluminescence (EL) with an InGaN blue LED (lambda(max) = 450 nm) at 60 mA.
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页数:8
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