On the Colloidal Stability of PbS Quantum Dots Capped with Methylammonium Lead Iodide Ligands

被引:29
作者
Bederak, Dmytro [1 ]
Sukharevska, Nataliia [1 ]
Kahmann, Simon [1 ]
Abdu-Aguye, Mustapha [1 ]
Duim, Herman [1 ]
Dirin, Dmitry N. [2 ,3 ]
Kovalenko, Maksym, V [2 ,3 ]
Portale, Giuseppe [1 ]
Loi, Maria A. [1 ]
机构
[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
[2] Swiss Fed Inst Technol, Dept Chem & Appl Biosci, CH-8093 Zurich, Switzerland
[3] Empa Swiss Fed Labs Mat Sci & Technol, CH-8600 Dubendorf, Switzerland
基金
欧洲研究理事会;
关键词
colloidal quantum dots; lead sulfide; inks; stability; MAPbI(3);
D O I
10.1021/acsami.0c16646
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Phase-transfer exchange of pristine organic ligands for inorganic ones is essential for the integration of colloidal quantum dots (CQDs) in optoelectronic devices. This method results in a colloidal dispersion (ink) which can be directly deposited by various solution-processable techniques to fabricate conductive films. For PbS CQDs capped with methylammonium lead iodide ligands (MAPbI(3)), the most commonly employed solvent is butylamine, which enables only a short-term (hours) colloidal stability and thus brings concerns on the possibility of manufacturing CQD devices on a large scale in a reproducible manner. In this work, we studied the stability of alternative inks in two highly polar solvents which impart long-term colloidal stability of CQDs: propylene carbonate (PC) and 2,6-difluoropyridine (DFP). The aging and the loss of the ink's stability were monitored with optical, structural, and transport measurements. With these solvents, PbS CQDs capped with MAPbI(3) ligands retain colloidal stability for more than 20 months, both in dilute and concentrated dispersions. After 17 months of ink storage, transistors with a maximum linear mobility for electrons of 8.5 x 10(-3) cm(2)/V s are fabricated; this value is 17% of the one obtained with fresh solutions. Our results show that both PC- and DFP-based PbS CQD inks offer the needed shelf life to allow for the development of a CQD device technology.
引用
收藏
页码:52959 / 52966
页数:8
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