Advanced photoconductive Terahertz near-field microprobes for 1550 nm wavelength operation based on InGaAs:Rh

被引：0

作者：

Nagel, Michael ^{[1
]}

Michalski, Alexander ^{[1
]}

Sawallich, Simon ^{[1
]}

Kohlhaas, R. B. ^{[2
]}

Globisch, Bjoern ^{[2
]}

机构：

[1] Protemics GmbH, D-52074 Germany, Germany

[2] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, D-10587 Berlin, Germany

来源：

2019 44TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2019年

关键词：

D O I：

10.1109/irmmw-thz.2019.8874527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoconductive microprobes have been widely established in recent years for surface-near THz field measurements with sub-wavelength resolution and applications such as wafer scanning or metamaterial characterization. Since the standard material for these probes is still LT-GaAs, the optical pump wavelength is usually set below 890 nm for direct bandgap excitation. Adaption to modern fiber-based THz TDS systems - operating at 1550 nm required the use of optical frequency doubling components, so far. In this work, we investigate an alternative solution based on InGaAs:Rh for direct operation at 1550 nm wavelength.

引用

页数：2

共 7 条

[1] Terahertz diffraction enhanced transparency probed in the near field [J].