Analytical Approach for High Temperature Analysis of AlGaN/GaN HEMT

被引：0

作者：

Parvesh ^{[1
]}

Kaur, Ravneet ^{[1
]}

Pandey, Sujata ^{[2
]}

Haldar, Subhasis ^{[3
]}

Gupta, Mridula ^{[1
]}

Gupta, R. S. ^{[1
]}

机构：

[1] Univ Delhi, Dept Elect Sci, Semicond Devices Res Lab, S Campus,Benito Juarez Rd, New Delhi 110021, India

[2] Amity Sch Engn & Technol, New Delhi, India

[3] Univ Delhi, Motilal Nehru Coll, New Delhi 110021, India

来源：

INTERNATIONAL CONFERENCE ON RECENT ADVANCES IN MICROWAVE THEORY AND APPLICATIONS, PROCEEDINGS | 2008年

关键词：

AlGaN/GaN; HEMT; Mobility; Saturation velocity; Temperature;

D O I：

10.1109/AMTA.2008.4763034

中图分类号：

Q6 [生物物理学];

学科分类号：

071011 ;

摘要：

An analytical thermal model of AlGaN/GaN high electron mobility transistor (HEMTs) has been developed. This temperature dependent model incorporates the polarization effects at heterointerface. The model also accounts for the mobility degradation with increase in temperature, which is one of the major causes in deteriorating the driving current. By using the variation of band gap with temperature, the temperature dependence on threshold voltage, sheet carrier concentration and drain current is studied. Further, the temperature variation shows the applicability of the device in a variable thermal environment. The results show excellent agreement when compared with experimental data thereby proving the validity of the model.

引用

页码：725 / +

页数：3

共 5 条

[1]

ANHOLT R, ELECT THERMAL CHARAC

[2] Polarization dependent analysis of AlGaN/GaN HEMT for high power applications [J].