Raman scattering behaviors of GaN single crystal grown by a Na flux method

被引：5

作者：

Park, SE

Cho, CR

Cho, YC

Jeong, SY ^{[1
]}

机构：

[1] COMTECS Ltd, Adv Mat Res Lab, Taegu 704702, South Korea

[2] Korea Basic Sci Inst, Busan Branch, Pusan 609735, South Korea

[3] Korea Basic Sci Inst, Dept Phys, Pusan 609735, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 03期

关键词：

GaN; single crystal growth; Na flux; micro-Raman;

D O I：

10.1143/JJAP.43.894

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bulk GaN single crystals above 4mm in size were grown by a Na flux method. Micro-Raman scattering from bulk GaN crystals was performed over the temperature range from 80 K to 300 K. The results obtained reveal that Raman phonon frequency decreases with increasing temperature. This temperature dependence of optical phonons is well described by an empirical relationship that has proved to be effective for other semiconductors. Small 667 cm(-1) peaks appeared systematically on every piece of bulk GaN. We suggest that lattice-disorder-induced modes are mainly responsible for the 667 cm(-1) peaks associated with the presence of Fe and Cr ions in the GaN crystals grown by the Na flux method.

引用

页码：894 / 896

页数：3