Electro-optical Modeling of High Power Semiconductor Laser for 800 nm Emission with an InGaAsP/GaAs/InGaP Quantum Hetero structure

We present the electrical-optical modeling of a high power semiconductor laser diode for emission at 800 nm wavelength. We describe a thoroughly detailed procedure for modeling the semiconductor laser device with a Separate Confinement Heterostructure (SCH), based on the material alloys of compounds families, InGaAsP/InGaAsP/InGaP on GaAs substrates. The heterostructure active region produces a peak emission at 0.8 nm. The SCH heterostructure comprises a quantum well 100 A thick of ImGal,AsyPi_y (x = 0.14, y = 0.73) alloy. The quantum barriers layers comprise quaternary materials of composition ImGa(x)As(y)P(1-y) (x = 0.39, y = 0.2). The confining layers of the quaternary SCH heterostrucure involve higher gap materials, such as ternary InGaN or quaternary AlGaInP. Band gaps of quaternary materials in the well and confining layers of the SCH heterostructure correspond to wavelengths of 0.8 gm (Eg = 1.55 eV) and 0.69 gm (Eg = 1.8 eV), respectively.