Electrical characterization and surface morphology of optimized Ti/Al/Ti/Au ohmic contacts for AlGaN/GaN HEMTs

被引：15

作者：

Bardwell, JA ^{[1
]}

Haffouz, S ^{[1
]}

Tang, H ^{[1
]}

Wang, R ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2006年 / 153卷 / 08期

关键词：

D O I：

10.1149/1.2206998

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Low-resistance ohmic contacts to high-electron-mobility transistors (HEMTs) are essential to ensure optimal device performance. Besides low contact resistance (< 1 Omega mm), good surface morphology and edge acuity are also desirable. We report a systematic study of the ohmic contact scheme Ti/Al/Ti/Au, where the total film thickness was kept constant at 285 nm and the relative ratios of Ti/Al inner layer thicknesses were varied. While the film with the highest Ti/Al ratio had slightly inferior electrical properties, the layer smoothness and edge acuity were far superior to the other ohmic contact schemes. (c) 2006 The Electrochemical Society.

引用

页码：G746 / G749

页数：4

共 8 条

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