15 GHz SPDT Switch Design using 0.15 μm GaAs Technology for Microwave Applications

被引：0

作者：

Sanusi, Rasidah ^{[1
]}

Ismail, Mohd Azmi ^{[1
]}

Norhapizin, K. ^{[1
]}

Rahim, A. I. Abdul ^{[1
]}

Marzuki, Arjuna ^{[2
]}

Yahya, Mohamed Razman ^{[1
]}

机构：

[1] TM R&D Sdn Bhd, TM R&D Innovat Ctr, Lingkaran Teknokrat Timur, Cyberjaya 63000, Selangor, Malaysia

[2] Univ Sains Malaysia, Sch Elect & Elect Engn, Engn Campus, George Town 14300, Malaysia

来源：

ICED: 2008 INTERNATIONAL CONFERENCE ON ELECTRONIC DESIGN, VOLS 1 AND 2 | 2008年

关键词：

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

In this paper, very low loss and high isolation single pole double throw (SPDT) switch design for microwave applications using pseudomorphic high-electron mobility transistor (pHEMT) is presented. The MMIC switch design is developed using a commercially available 0.15 mu m GaAs pHEMT technology. At the operating frequency of 15 GHz, the SPDT switch has 1.89 dB insertion loss and 26.66 dB of isolation. It also demonstrates 28.8 dBm of input P1dB gain compression point (P-1dB) and 25.9 dBm of output P1dB.

引用

页码：228 / +

页数：2

共 50 条

[31] A novel loss compensation technique analysis and design for 60 GHz CMOS SPDT switch
郑宗华
孙玲玲
刘军
张胜洲
Journal of Semiconductors, 2016, 37 (01) : 92 - 95
[32] A novel loss compensation technique analysis and design for 60 GHz CMOS SPDT switch
郑宗华
孙玲玲
刘军
张胜洲
Journal of Semiconductors, 2016, (01) : 92 - 95
[33] DESIGN of a 18 GHZ DIVIDE-by-4 PRESCALER USING 1μM GaAs HBT TECHNOLOGY
Li, Chengzhi
Qu, Xiaofeng
Lu, Kejie
Sui, Wenquan
2009 IEEE 9TH MALAYSIA INTERNATIONAL CONFERENCE ON COMMUNICATIONS (MICC), 2009, : 354 - 357
[34] A 36 GHz Four-Bit Tunable All-Pass Phase Shifter Using 0.15-μm GaAs Technology
Lin, En-Yang
Huang, Chia-Chen
Tang, Sida
Su, Chun-Chi
Wang, Yeong-Her
TENCON 2015 - 2015 IEEE REGION 10 CONFERENCE, 2015,
[35] A 94 GHz Asymmetric High Power SPDT Switch in 130nm-SiGe Technology
Lou, Jiayin
Chen, Jixin
Zhou, Peigen
2024 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY, ICMMT, 2024,
[36] 220-325 GHz high-isolation SPDT switch in InP DHBT technology
Shivan, T.
Hossain, M.
Stoppel, D.
Weimann, N.
Boppel, S.
Doerner, R.
Heinrich, W.
Krozer, V.
ELECTRONICS LETTERS, 2018, 54 (21) : 1222 - 1223
[37] Power Amplifier MMICs for 15 GHz Microwave Links in 0.25 μm GaN Technology
Camarchia, Vittorio
Quaglia, Roberto
Ramella, Chiara
Pirola, Marco
PROCEEDINGS OF 2017 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC 2017), 2017,
[38] Photoconductive Switch Design for Microwave Applications
Karabegovic, Armin
O'Connell, Robert M.
Nunnally, William C.
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2009, 16 (04) : 1011 - 1019
[39] Design of SPDT switch, 6 bit digital attenuator, 6 bit digital phase shifter for L-band T/R module using 0.7 μM GaAs MMIC technology
Doddamani, Nagaveni D.
Harishchandra
Nandi, Anil V.
2007 INTERNATIONAL CONFERENCE OF SIGNAL PROCESSING, COMMUNICATIONS AND NETWORKING, VOLS 1 AND 2, 2006, : 302 - +
[40] A DC-50 GHz SPDT Switch with Maximum Insertion Loss of 1.9 dB in a Commercial 0.13-μm SOI Technology
Yu, Bo
Ma, Kaixue
Meng, Fanyi
Yang, Wanlan
Yeo, Kiat Seng
Zhang, Shaoqiang
Purakh, Raj Verma
2015 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC), 2015, : 197 - 198

← 1 2 3 4 5 →