15 GHz SPDT Switch Design using 0.15 μm GaAs Technology for Microwave Applications

被引：0

作者：

Sanusi, Rasidah ^{[1
]}

Ismail, Mohd Azmi ^{[1
]}

Norhapizin, K. ^{[1
]}

Rahim, A. I. Abdul ^{[1
]}

Marzuki, Arjuna ^{[2
]}

Yahya, Mohamed Razman ^{[1
]}

机构：

[1] TM R&D Sdn Bhd, TM R&D Innovat Ctr, Lingkaran Teknokrat Timur, Cyberjaya 63000, Selangor, Malaysia

[2] Univ Sains Malaysia, Sch Elect & Elect Engn, Engn Campus, George Town 14300, Malaysia

来源：

ICED: 2008 INTERNATIONAL CONFERENCE ON ELECTRONIC DESIGN, VOLS 1 AND 2 | 2008年

关键词：

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

In this paper, very low loss and high isolation single pole double throw (SPDT) switch design for microwave applications using pseudomorphic high-electron mobility transistor (pHEMT) is presented. The MMIC switch design is developed using a commercially available 0.15 mu m GaAs pHEMT technology. At the operating frequency of 15 GHz, the SPDT switch has 1.89 dB insertion loss and 26.66 dB of isolation. It also demonstrates 28.8 dBm of input P1dB gain compression point (P-1dB) and 25.9 dBm of output P1dB.

引用

页码：228 / +

页数：2

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