Dynamics of a trapped domain wall in a spin-valve nanostructure with current perpendicular to the plane

被引:23
|
作者
Rebei, A. [1 ]
Mryasov, O. [1 ]
机构
[1] Seagate Res Ctr, Pittsburgh, PA 15222 USA
关键词
D O I
10.1103/PhysRevB.74.014412
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A study of transverse tail-to-tail magnetic domain walls (DWs) in current perpendicular to the plane (CPP) spin valves (SVs) of various dimensions is presented. For films with dimensions larger than the DW width, we find that DW motion can give rise to a substantial low-frequency noise. For dimensions comparable to the DW width, we show that the DW can be controlled by an external field or by a spin momentum torque as opposed to the case of CPP-SV with uniform magnetization. It is shown that in a single domain biased CPP-SV, the spin torque can give rise to 1/f-type noise. The dipolar field, the spin torque, and the Oersted field are all accounted for in this work. It is shown that the proposed SV requires low current densities to move DWs, a feature which can be utilized for logical operation or magnetic field sensing without having to switch the net magnetization of the thin film.
引用
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页数:15
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