A concurrent multiband CMOS low-noise amplifier for 4G standard receivers

被引：0

作者：

Jung, Jihak ^{[1
]}

Choi, Jaehoon ^{[2
]}

机构：

[1] Samsung Elect, DMC R&D Ctr, RF Lab, Suwon 443742, Gyeonggi Do, South Korea

[2] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2014年 / 56卷 / 04期

关键词：

concurrent; low-noise amplifier; Wibro; CMOS; long-term evolution; HSDPA: High-Speed Downlink Packet Access; triple resonance; WCDMA: Wideband Code Division Multiple Access; BAND; LNA;

D O I：

10.1002/mop.28226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, a concurrent triple-band low-noise amplifier (LNA), which operates at 698-800, 1920-2170, and 2300-2400 MHz, is designed for long-term evolution, WCDMA/HSDPA, and Wibro services. The circuit is designed with TSMC 0.18-mu m RF CMOS technology. The main topology of the proposed LNA is the cascade architecture with source degeneration. To obtain the necessary gains for this frequency bands, a series LC circuit is added in parallel with the parallel LC tank of a single-band LNA. The proposed LNA is especially suitable for use in multistandard wireless receiver front-ends as it saves die area and reduces power consumption by replacing parallel LNAs for each channel frequency. The proposed LNA has voltage gains of 14.6, 15.2, and 15.5 dB at 749, 1920, and 2300 MHz, respectively, while dissipating 7 mA from a 1.5-V supply voltage. (c) 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:834-838, 2014

引用

页码：834 / 838

页数：5

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