Dual-Gate Photosensitive a-Si:H Thin-Film Transistor With a π-Shape Channel for Large-Area Imaging and Sensing

被引：19

作者：

Ou, Hai ^{[1
]}

Wang, Kai ^{[2
,3
]}

Ding, Cairong ^{[1
]}

Deng, S. Z. ^{[1
]}

Xu, N. S. ^{[1
]}

Chen, Jun ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[2] Carnegie Mellon Univ, Sun Yat Sen Univ, Joint Inst Engn, Guangzhou 510006, Guangdong, Peoples R China

[3] SYSU CMU, Shunde Int Joint Res Inst, Foshan 528300, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Dual-gate photosensitive TFT; amorphous Si; large-area imaging; optical sensing;

D O I：

10.1109/LED.2015.2493562

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports on a photosensitive dual-gate amorphous silicon (a-Si:H) thin-film transistor (TFT) for low-level light detection. It differs from a conventional dual-gate TFT in that a 760-nm pi-shape channel layer is implemented instead of a typically thin a-Si: H layer of 50 similar to 100 nm in the conventional TFTs. Not only such a device improves the photoabsorption, it also preserves the transfer characteristics of the TFT. Upon the low-level light exposure, the photosensitivity can be multiplied by operating the device in the subthreshold region. In addition, resetting the device can minimize the residual photocurrent and improves the photoresponse. The device can be, therefore, sensitive and fast enough to enable optical applications, such as low-dose indirect-conversion X-ray imaging and large-area document scanning.

引用

页码：1373 / 1375

页数：3

共 7 条

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