Electron-beam induced initial growth of platinum films using Pt(PF3)4

被引:46
作者
Wang, S [1 ]
Sun, YM [1 ]
Wang, Q [1 ]
White, JM [1 ]
机构
[1] Univ Texas, Texas Mat Inst, Ctr Mat Chem, Austin, TX 78712 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 04期
关键词
D O I
10.1116/1.1761266
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using an organometallic precursor, tetrakis(trifluorophosphine)platinum [Pt(PF3)(4)], electron-beam induced deposition of Pt thin films on a Cr-coated Si(100) substrate was investigated. Based on Auger electron spectroscopy, the Pt content reached 60 at. % for a 3 kV e-beam flux of 2.1 x 10(-2) A cm(-2), a precursor pressure of 2 x 10(-5) Torr, and a substrate temperature of 80 degreesC. As the flux ratio (e-beam/precursor) increased above the optimized value of 10, the rate shifted from control by the e-beam flux to the precursor flux. The phosphorus content was reduced by adding 02 (C) 2004 American Vacuum Society.
引用
收藏
页码:1803 / 1806
页数:4
相关论文
共 14 条
[11]  
SUN YM, 2002, MRS S P, V750
[12]  
SUN YM, 2000, MATER RES SOC S P, V596, P596
[13]   Field emitter array fabricated using focused ion and electron beam induced reaction [J].
Yavas, O ;
Ochiai, C ;
Takai, M ;
Park, YK ;
Lehrer, C ;
Lipp, S ;
Frey, L ;
Ryssel, H ;
Hosono, A ;
Okuda, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (02) :976-979
[14]   DEPOSITION OF PLATINUM FROM PT(PF3)4 ON ATOMICALLY CLEAN PLATINUM SURFACES [J].
ZHANG, R ;
COMITA, PB .
CHEMICAL PHYSICS LETTERS, 1992, 200 (03) :297-302