Electron-beam induced initial growth of platinum films using Pt(PF3)4

被引：46

作者：

Wang, S ^{[1
]}

Sun, YM ^{[1
]}

Wang, Q ^{[1
]}

White, JM ^{[1
]}

机构：

[1] Univ Texas, Texas Mat Inst, Ctr Mat Chem, Austin, TX 78712 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 04期

关键词：

D O I：

10.1116/1.1761266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using an organometallic precursor, tetrakis(trifluorophosphine)platinum [Pt(PF3)(4)], electron-beam induced deposition of Pt thin films on a Cr-coated Si(100) substrate was investigated. Based on Auger electron spectroscopy, the Pt content reached 60 at. % for a 3 kV e-beam flux of 2.1 x 10(-2) A cm(-2), a precursor pressure of 2 x 10(-5) Torr, and a substrate temperature of 80 degreesC. As the flux ratio (e-beam/precursor) increased above the optimized value of 10, the rate shifted from control by the e-beam flux to the precursor flux. The phosphorus content was reduced by adding 02 (C) 2004 American Vacuum Society.

引用

页码：1803 / 1806

页数：4

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