Properties of doped GaSb single crystals grown by the czochralski method

被引：1
|
作者：
Sestakova, V
Stepanek, B
Sestak, J
机构：
[1] Institute of Physics, Acad. of Sci. of the Czech Republic, Department of Semiconductors, Praha
[2] Inst. Phys. Acad. Sci. Czech Rep., Department of Semiconductors, 16200 Praha - 6
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1996年 / 31卷 / 07期
关键词：
D O I：
10.1002/crat.2170310721
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The specific electrical properties and average dislocation density of GaSb crystals are shown and discussed regarding various elements presented as dopant. The single crystals were grown by the Czochralski method without encapsulant in a flowing atmosphere of molecular hydrogen, on the one hand, and of atomic hydrogen, on the other hand. The results are summarized in the Table II.
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页码：929 / 934
页数：6
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