Analysis of the resistance of two-dimensional holes in SiGe over a wide temperature range

被引：10

作者：

Senz, V ^{[1
]}

Ihn, T

Heinzel, T

Ensslin, K

Dehlinger, G

Grützmacher, D

Gennser, U

Hwang, EH

Das Sarma, S

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Paul Scherrer Inst, CH-5234 Villigen, Switzerland

[3] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

metal-insulator transition; SiGe; two-dimensional transport; scattering;

D O I：

10.1016/S1386-9477(02)00268-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The temperature dependence of a system exhibiting a meal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90 K, Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insulating contributions contained in the calculation of the scattering rate I/tau(D)(E,T), each dominating in a limited temperature range. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：723 / 727

页数：5

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