Strain relaxation by alloying effects in Ge islands grown on Si(001)

被引：103

作者：

Liao, XZ ^{[1
]}

Zou, J

Cockayne, DJH

Qin, J

Jiang, ZM

Wang, X

Leon, R

机构：

[1] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

[2] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China

[3] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.60.15605

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transmission electron microscopy is used to study the morphology and the composition profile of "pure'' Ge islands grown at high temperature on Si(001) by molecular beam epitaxy. An alloying process, involving mass transport from the substrate to the islands during the island growth, was identified. It was found that, as a result of Si mass transport to the Ge islands, the island/substrate interface moves towards the substrate, and trenches form on the substrate surface around the islands; Reduction of the misfit strain at the island/substrate interface is the driving force for this process. [S0163-1829(99)00738-1].

引用

页码：15605 / 15608

页数：4

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