The role of the HfO2-TiN interface in capacitance-voltage nonlinearity of Metal-Insulator-Metal capacitors

被引：30
|
作者：
Wenger, Ch. [1 ]
Lukosius, M. [1 ]
Weidner, G. [1 ]
Muessig, H. -J. [1 ]
Pasko, S. [2 ]
Lohe, Ch. [2 ]
机构：
[1] IHP, D-15236 Frankfurt, Oder, Germany
[2] AIXTRON AG, D-52072 Aachen, Germany
来源：
THIN SOLID FILMS | 2009年 / 517卷 / 23期
关键词：
MIM capacitor; High-k dielectric; Nonlinearity; TIN THIN-FILMS; MECHANICAL-PROPERTIES; TITANIUM NITRIDE; OXIDATION; TEMPERATURE;
D O I：
10.1016/j.tsf.2009.02.074
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The high-k Metal-insulator-Metal (MIM) capacitor Back-End-of-Line (BEOL) integration into mixed signal and Radio Frequency (RF) circuits is characterized by the effort toward optimizing the capacitance voltage linearity. This letter is focused on the role of the TiOxNy-based interfacial layer with respect to Capacitance-Voltage C(V) curves of Au/HfO2/TiN MIM capacitors. The correlation between the quadratic capacitance-voltage variation and interfacial layer thickness is demonstrated. The quadratic voltage coefficient of the dielectric stack can be reduced by increasing the thickness of the TiOxNy layer. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：6334 / 6336
页数：3
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