Influence of O2/Ar ratio on the properties of transparent conductive niobium-doped ZnO films

被引：1
作者：
Cao Feng [1 ]
Wang YiDing [1 ]
Liu KuiXue [1 ]
Yin JingZhi [1 ]
Long BeiHong [1 ]
Li Li [1 ]
Zhang Yu [1 ]
Chen XiaMei [1 ]
机构：
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
来源：
CHINESE SCIENCE BULLETIN | 2009年 / 54卷 / 13期
基金：
高等学校博士学科点专项科研基金;
关键词：
semiconductors; electrical properties; thin films; transparent conductive oxides; sputtering; THIN-FILMS; OPTICAL-PROPERTIES; TEMPERATURE; DEPOSITION; TARGET; GROWTH;
D O I：
10.1007/s11434-009-0377-y
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Niobium-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300A degrees C. The influence of O-2/Ar ratio on the structural, electrical and optical properties of the as-deposited films is investigated by X-ray diffraction, Hall measurement and optical transmission spectroscopy. The lowest resistivity of 4.0x10(-4) Omega A center dot cm is obtained from the film deposited at the O-2/Ar ratio of 1/12. The average optical transmittance of the films is over 90%.
引用
收藏
页码：2217 / 2220
页数：4
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