Optical and electrical characterization of aluminium doped ZnO layers

被引：38

作者：

Major, C. ^{[1
]}

Nemeth, A. ^{[1
]}

Radnoczi, G. ^{[1
]}

Czigany, Zs. ^{[1
]}

Fried, M. ^{[1
]}

Labadi, Z. ^{[1
]}

Barsony, I. ^{[1
]}

机构：

[1] MTA MFA Res Inst Tech Phys & Mat Sci, H-1121 Budapest, Hungary

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 21期

基金：

匈牙利科学研究基金会;

关键词：

Zinc oxide; Transparent conductive oxides; Spectroscopic ellipsometry; Reactive sputtering; Structure-property relation; ZINC-OXIDE FILMS; GAS SENSOR APPLICATIONS; THIN-FILMS; OPTIMIZATION; DEPOSITION; PLASMA; RF;

D O I：

10.1016/j.apsusc.2009.06.088

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Al doped ZnO (ZAO) thin films (with Al-doping levels 2 at.%) were deposited at different deposition parameters on silicon substrate by reactive magnetron sputtering for solar cell contacts, and samples were investigated by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS) and spectroscopic ellipsometry (SE). Specific resistances were measured by the well known 4-pin method. Well visible columnar structure and in most cases voided other regions were observed at the grain boundaries by TEM. EELS measurements were carried out to characterize the grain boundaries, and the results show spacing voids between columnar grains at samples with high specific resistance, while no spacing voids were observed at highly conductive samples. SE measurements were evaluated by using the analytical expression suggested by Yoshikawa and Adachi [H. Yoshikawa, S. Adachi, Japanese Journal of Applied Physics 36 (1997) 6237], and the results show correlation between specific resistance and band gap energy and direct exciton strength parameter. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：8907 / 8912

页数：6

共 21 条

[1] Optimization of the electrical properties of magnetron sputtered aluminum-doped zinc oxide films for opto-electronic applications [J].

Agashe, C ;

Kluth, O ;

Schöpe, G ;

Siekmann, H ;

Hüpkes, J ;

Rech, B .

THIN SOLID FILMS, 2003, 442 (1-2) :167-172

[2] Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties [J].

Cebulla, R ;

Wendt, R ;

Ellmer, K .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) :1087-1095

[3] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].

Chen, YF ;

Bagnall, DM ;

Koh, HJ ;

Park, KT ;

Hiraga, K ;

Zhu, ZQ ;

Yao, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918

[4] NH3 gas sensing properties of nanocrystalline ZnO based thick films [J].

Devi, G. Sarala ;

Subrahmanyam, V. Bala ;

Gadkari, S. C. ;

Gupta, S. K. .

ANALYTICA CHIMICA ACTA, 2006, 568 (1-2) :41-46

[5] ZnO thin film deposition by laser ablation of Zn target in oxygen reactive atmosphere [J].

Dinescu, M ;

Verardi, P .

APPLIED SURFACE SCIENCE, 1996, 106 :149-153

[6] XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films [J].

Islam, MN ;

Ghosh, TB ;

Chopra, KL ;

Acharya, HN .

THIN SOLID FILMS, 1996, 280 (1-2) :20-25

[7] DATA-ANALYSIS FOR SPECTROSCOPIC ELLIPSOMETRY [J].

JELLISON, GE .

THIN SOLID FILMS, 1993, 234 (1-2) :416-422

[8] OPTICAL-PROPERTIES OF SPUTTER-DEPOSITED ZNO-AL THIN-FILMS [J].

JIN, ZC ;

HAMBERG, I ;

GRANQVIST, CG .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :5117-5131

[9] Electrical and optical properties of ZnO:Al films prepared by an evaporation method [J].

Ma, J ;

Ji, F ;

Ma, HL ;

Li, SY .

THIN SOLID FILMS, 1996, 279 (1-2) :213-215

[10] Improved electrical stability and UV emission of zinc oxide thin films prepared by combination of metalorganic chemical vapor deposition technique and post-deposition hydrogen doping [J].

Myong, Seung Yeop ;

Lim, Koeng Su .

ORGANIC ELECTRONICS, 2007, 8 (01) :51-56

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