FEM thermal analysis of Cu/diamond/Cu and diamond/SiC heat spreaders

被引：11

作者：

Denu, Garuma Abdisa ^{[1
,2
]}

Mirani, Jibran Hussain ^{[1
]}

Fu, Jiao ^{[1
]}

Liu, Zongchen ^{[1
]}

Wang, Hongxing ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Inst Wide Band Gap Semicond, Xian 710049, Peoples R China

[2] Mettu Univ, Dept Phys, Mettu, Ethiopia

来源：

AIP ADVANCES | 2017年 / 7卷 / 03期

关键词：

STRESS-DISTRIBUTION; FILM THICKNESS; CONDUCTIVITY; COMPOSITES; CARBON; FABRICATION; DEPOSITION; INTERLAYER; STRENGTH; COATINGS;

D O I：

10.1063/1.4978043

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effects of thermal stress resulting from thermal cooling in copper/diamond/copper heat spreader is investigated using finite element method. A similar model of diamond/SiC heat spreader is compared without addition of interlayer. The effect of carbide interlayer in reduction of interfacial thermal stress is investigated. The results show that the carbide interlayer film thickness is critical in stress reduction for a copper/diamond/copper heat spreader device. Diamond/SiC device has lower interfacial stress without interlayer. The study of mechanical and thermal property of diamond heat spreader is useful for optimal designs of efficient heat spreader for electronic components. (C) 2017 Author(s).

引用

页数：9

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