Isoelectronic Centers in Quantum Dots and Photoluminescence Decay

被引：1

作者：

Sonawane, Kiran G. ^{[1
]}

Rajesh, Ch. ^{[1
]}

Mahamuni, Shailaja ^{[1
]}

机构：

[1] Univ Pune, Dept Phys, Pune 411007, Maharashtra, India

来源：

ADVANCED NANOMATERIALS AND NANOTECHNOLOGY | 2013年 / 143卷

关键词：

Quantum dots; Isoelectronic doping; Luminescence; Time resolved photoluminescence; SEMICONDUCTOR ALLOYS; OPTICAL-PROPERTIES; NANOCRYSTALS; EXCITON; SIZE; ZNSE;

D O I：

10.1007/978-3-642-34216-5_27

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

It is hypothesized that Te forms an isoelectronic trap in ZnSe. These isoelectronic centers show blue and green band luminescence at low temperature. Quantum confinement effects reveal isoelectronic trap related luminescence at room temperature in contrast to bulk ZnSe1 - yTey. To find the effect of these isoelectronic center on Mn2+ d-d transition luminescence, Mn doped ZnSe0.99Te0.01 QDs are synthesized. Mn doped ZnSe shows dominating orange emission related to Mn2+ d-d transitions. This Mn emission increases at the cost of band edge emission. Addition of Te as small as 1 % in ZnSe strongly quenches photoluminescence of Mn-doped ZnSe QDs showing predominance of Te-isoelectronic centers. Orange emission and near band edge luminescence in Mn doped ZnSe0.99Te0.01 are not correlated as they are in case of Mn-doped ZnSe QDs. Time resolved photoluminescence and photoluminescence excitation study revealed these isoelectronic center changes the recombination path ways. The changes in relaxation path ways are responsible for distinct emission behavior of ZnSe(0.99)Te(0.01)QDs.

引用

页码：261 / 269

页数：9

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