Growth 3nd evaluation of high quality SiC crystal by sublimation method

被引：4
作者：
Oyanagi, N
Yamaguchi, H
Kato, T
Nishizawa, S
Arai, K
机构：
[1] R&D Assoc Future Electron Devices, Tsukuba, Ibaraki 3058568, Japan
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[3] AIST Tsukuba Cent 2, Ultra Low Loss Power Device Technol Res Body UPR, Tsukuba, Ibaraki 3058568, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
etch pits; polarizing microscope; section topography; sublimation method; synchrotron radiation; X-ray topography;
D O I：
10.4028/www.scientific.net/MSF.389-393.87
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High quality 6H-SiC single crystal was grown using the modified Lely method under pressure-controlled low-growth-rate conditions. The grown crystal contained no micropipes and its etch pit density was 4 x 10(3) cm(-2). The presence of a Pendellosung fringe as revealed by section topography showed that the grown crystal was composed of a single domain. The relation between etch pits and defects is also discussed.
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收藏
页码：87 / 90
页数：4
相关论文
共 10 条
[1]   STRUCTURAL MACRO-DEFECTS IN 6H-SIC WAFERS [J].
GLASS, RC ;
KJELLBERG, LO ;
TSVETKOV, VF ;
SUNDGREN, JE ;
JANZEN, E .
JOURNAL OF CRYSTAL GROWTH, 1993, 132 (3-4) :504-512
[2]  
HA S, 1993, J CRYST GROWTH, V220, P308
[3]   Sublimation growth of silicon carbide bulk crystals:: experimental and theoretical studies on defect formation and growth rate augmentation [J].
Hofmann, D ;
Bickermann, M ;
Eckstein, R ;
Kölbl, M ;
Müller, SG ;
Schmitt, E ;
Weber, A ;
Winnacker, A .
JOURNAL OF CRYSTAL GROWTH, 1999, 198 :1005-1010
[4]   In-situ observation of silicon carbide sublimation growth by X-ray topography [J].
Kato, T ;
Oyanagi, N ;
Yamaguchi, H ;
Nishizawa, S ;
Khan, MN ;
Kitou, Y ;
Arai, K .
JOURNAL OF CRYSTAL GROWTH, 2001, 222 (03) :579-585
[5]   Structural properties of subgrain boundaries in bulk SiC crystals [J].
Katsuno, M ;
Ohtani, N ;
Aigo, T ;
Fujimoto, T ;
Tsuge, H ;
Yashiro, H ;
Kanaya, M .
JOURNAL OF CRYSTAL GROWTH, 2000, 216 (1-4) :256-262
[6]   Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers [J].
Neudeck, PG ;
Huang, W ;
Dudley, M .
SOLID-STATE ELECTRONICS, 1998, 42 (12) :2157-2164
[7]   Near-equilibrium growth of micropipe-free 6H-SiC single crystals by physical vapor transport [J].
Schulze, N ;
Barrett, DL ;
Pensl, G .
APPLIED PHYSICS LETTERS, 1998, 72 (13) :1632-1634
[8]   Structural defects in alpha-SiC single crystals grown by the modified-Lely method [J].
Takahashi, J ;
Ohtani, N ;
Kanaya, M .
JOURNAL OF CRYSTAL GROWTH, 1996, 167 (3-4) :596-606
[9]   CRYSTALLINE IMPERFECTIONS IN 4H SIC GROWN WITH A SEEDED LELY METHOD [J].
TUOMINEN, M ;
YAKIMOVA, R ;
GLASS, RC ;
TUOMI, T ;
JANZEN, E .
JOURNAL OF CRYSTAL GROWTH, 1994, 144 (3-4) :267-276
[10]   Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H-SiC Schottky diodes [J].
Wahab, Q ;
Ellison, A ;
Henry, A ;
Janzén, E ;
Hallin, C ;
Di Persio, J ;
Martinez, R .
APPLIED PHYSICS LETTERS, 2000, 76 (19) :2725-2727
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