Synthesis of hexagonal AlN microbelts at low temperature

被引：11

作者：

Wang, H. L. ^{[1
]}

Lv, H. M. ^{[2
]}

Chen, G. D. ^{[1
]}

Ye, H. G. ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Sci, Xian 710049, Shaanxi, Peoples R China

[2] Xian Univ Technol, Dept Appl Phys, Xian 710048, Shaanxi, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 477卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

h-AlN; Microbelts; Photoluminescence spectrum; Growth mechanism; ALUMINUM NITRIDE; GROWTH; NANOWIRES;

D O I：

10.1016/j.jallcom.2008.10.070

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Pure hexagonal aluminum nitride microbelts have been successfully synthesized by directly reacting AlCl3 with NaN3 at low temperature under the condition of non-solvent system. The reaction product (gray-white powder) is characterized by High Resolution Transmission Electron Microscope (HRTEM), the result reveals that the product has a long curling belts morphology with the length of several micrometers. The results of both electron diffraction (ED) and X-ray diffraction (XRD) indicate that the AlN microbelts have a pure hexagonal monocrystalline structure with slight curling. A room temperature photoluminescence spectrum (PL) of the synthesized sample shows an emission peak at 422 nm. The growth mechanism and photoluminescence spectrum of AlN microbelts are discussed. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：580 / 582

页数：3

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