Low-pressure plasma-etching of bulk polymer materials using gas mixture of CF4 and O2

被引:14
作者
Nabesawa, Hirofumi [1 ,2 ]
Hiruma, Takaharu [1 ]
Hitobo, Takeshi [3 ]
Wakabayashi, Suguru [4 ]
Asaji, Toyohisa [3 ,5 ]
Abe, Takashi [6 ]
Seki, Minoru [1 ]
机构
[1] Chiba Univ, Grad Sch Engn, Dept Appl Chem & Biotechnol, Chiba 2638522, Japan
[2] Toyama Ind Technol Ctr, Cent Res Inst, Takaoka, Toyama 9330981, Japan
[3] Tateyama Machine Co Ltd, Toyama 9301305, Japan
[4] Tateyama Kagaku Ind Co Ltd, Toyama 9301305, Japan
[5] Oshima Natl Coll Maritime Technol, Dept Elect Mech Engn, Suo Oshima 7422193, Japan
[6] Niigata Univ, Grad Sch Sci & Technol, Dept Mech & Prod Engn, Niigata 9502181, Japan
基金
日本科学技术振兴机构; 日本学术振兴会;
关键词
NANOIMPRINT LITHOGRAPHY; FABRICATION; WETTABILITY; ARRAYS;
D O I
10.1063/1.4830277
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, we have proposed a low-pressure reactive ion etching of bulk polymer materials with a gas mixture of CF4 and O-2, and have achieved precise fabrication of poly(methyl methacrylate) (PMMA) and perfluoroalkoxy (PFA) bulk polymer plates with high-aspect-ratio and narrow gap array structures, such as, pillar, frustum, or cone, on a nano/micro scale. The effects of the etching conditions on the shape and size of each pillar were evaluated by changing etching duration and the size/material of etching mask. The fabricated PMMA array structures indicate possibilities of optical waveguide and nanofiber array. PFA cone array structures showed super-hydrophobicity without any chemical treatments. Also, polystyrene-coated silica spheres were used as an etching mask for the pillar array structure formation to control the gap between pillars. (c) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
引用
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页数:7
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