Large planar Hall effect in the La0.7Sr0.3MnO3 thin films at room temperature

被引：4
作者：
Kim, Hyo-Jin [1 ]
Yoo, Dae Gil [1 ]
Yoo, Sang-Im [1 ]
机构：
[1] Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea
来源：
MATERIALS LETTERS | 2014年 / 123卷
关键词：
Planar Hall effect; LSMO; Strain-induced in-plane anisotropy; MAGNETIC-ANISOTROPY; STRAIN; MAGNETORESISTANCE;
D O I：
10.1016/j.matlet.2014.02.085
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report a large planar Hall effect (PHE) in La0.7Sr0.3MnO3 (LSMO) thin films at room temperature. Compared with LSMO thin film grown on SrTiO3 (STO) (100) substrate by pulsed laser deposition (PLD), the maximum variation in the PHE signals of those on MgO (100) substrate was around an order of magnitude larger at 300 K, corresponding to two orders of magnitude larger than typical PHE values for ferromagnetic metals or permalloys. Larger improvement in the PHE of LSMO/MgO film is attributable to higher strain-induced in-plane magnetic anisotropy. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：23 / 26
页数：4
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