Reliable Antifuse One-Time-Programmable Scheme With Charge Pump for Postpackage Repair of DRAM

被引：4

作者：

Li, Xian ^{[1
]}

Zhong, Huicai ^{[1
,2
]}

Tang, Zhenhui ^{[3
]}

Jia, Cheng ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[3] Univ Elect Sci & Technol China, Coll Microelect & Solid State Elect, Chengdu 611731, Peoples R China

来源：

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2015年 / 23卷 / 09期

关键词：

Antifuse (AF) cell; bit-repair scheme; charge pump; dynamic random access memory (DRAM); programmable decoder; VOLTAGE;

D O I：

10.1109/TVLSI.2014.2354836

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A reliable antifuse (AF) one-time-programmable (OTP) cell and its sensing plus programming circuits for postpackage repair of dynamic random access memory (DRAM) are presented. The OTP cell was fabricated without any process modifications by utilizing destructive breakdown of thin gate oxide of nMOS capacitor as storage. The measurement results of OTP array fabricated by 0.13-mu m CMOS process show a tight read current distribution after programming. For pin compatibility with standard DRAM specifications, an internal charge pump is designed to provide high program voltage without any additional pin. Based on the AF cells, a programmable decoder is proposed to store the address of failed bit, decode the input address, and decide whether to access normal bit or redundant one of DRAM. The whole bit-repair scheme uses static latches as redundant cells. By avoiding the uses of address comparator and multiplexer, the proposed scheme shows less access penalty compared with prior scheme.

引用

页码：1956 / 1960

页数：5

共 13 条

[1] A new CMOS charge pump for low voltage applications [J].

Ahmadi, MM ;

Jullien, G .

2005 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLS 1-6, CONFERENCE PROCEEDINGS, 2005, :4261-4264

[2]

Bou-Sleiman S., 2013, IEEE T VERY LARGE SC, V22, P1716

[3] A 32-KB standard CMOS antifuse one-time programmable ROM embedded in a 16-bit microcontroller [J].

Cha, Hyouk-Kyu ;

Yun, Ilhyun ;

Kim, Jinbong ;

So, Byeong-Cheol ;

Chun, Kanghyup ;

Nam, Ilku ;

Lee, Kwyro .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (09) :2115-2124

[4] ON-CHIP HIGH-VOLTAGE GENERATION IN MNOS INTEGRATED-CIRCUITS USING AN IMPROVED VOLTAGE MULTIPLIER TECHNIQUE [J].

DICKSON, JF .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (03) :374-378

[5]

Jong-Pil Son, 2010, Proceedings of the 36th European Solid State Circuits Conference (ESSCIRC 2010), P482, DOI 10.1109/ESSCIRC.2010.5619748

[6]

Kim J.-Y., 2013, IEEE T VERY LARGE SC, V22, P1441

[7] Electrically programmable fuse (eFUSE) using electromigration in silicides [J].

Kothandaraman, C ;

Iyer, SK ;

Iyer, SS .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (09) :523-525

[8]

Peng J., 2006, 21st Non-Volatile Semiconductor Memory Workshop. (IEEE Cat. No. 06EX1246), P24, DOI 10.1109/.2006.1629479

[9]

Shin JS, 2000, IEEE J SOLID-ST CIRC, V35, P1227

[10] LASER PROGRAMMABLE REDUNDANCY AND YIELD IMPROVEMENT IN A 64K DRAM [J].

SMITH, RT ;

CHLIPALA, JD ;

BINDELS, JFM ;

NELSON, RG ;

FISCHER, FH ;

MANTZ, TF .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1981, 16 (05) :506-514

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