Effects of underlayer on one-directional anisotropy in spin-valve films without any antiferromagnetic layers

被引：2

作者：

Noma, K ^{[1
]}

Kanai, H ^{[1
]}

机构：

[1] Fujitsu Ltd, Component Technol Dept, Magnet Component Div, Storage Prod Grp, Nagano 3818501, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 11期

关键词：

D O I：

10.1063/1.1682789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The magnetoresistive (MR) characteristics of spin-valve films with no antiferromagnetic layer were investigated. The films were deposited with various underlayer materials and the one-directional anisotropy in MR curves of the film with Ta underlayer turned out very strong anisotropy compared with that of other materials. It seemed that the strong one-directional anisotropy was caused by increase of coercivity and magnetic anisotropy induced in the pinned layer by external dc magnetic field during deposition. The calculated MR curves by using a torque equation clarified a relation between the magnetic characteristics of the pinned layer and the one-directional anisotropy in measured MR curves. (C) 2004 American Institute of Physics.

引用

页码：6669 / 6671

页数：3

共 32 条

[31] Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt]n lower synthetic-antiferromagnetic layer
Lee, Seung-Eun
Shim, Tae-Hun
Park, Jea-Gun
NANOTECHNOLOGY, 2015, 26 (47)
[32] Large magnetoresistance ratio of 10% by Fe50Co50 layers for current-confined-path current-perpendicular-to-plane giant magnetoresistance spin-valve films -: art. no. 082507
Fukuzawa, H
Yuasa, H
Hashimoto, S
Iwasaki, H
Tanaka, Y
APPLIED PHYSICS LETTERS, 2005, 87 (08)

← 1 2 3 4 →