Synthesis of nanocrystalline tin oxide thin film by swift heavy ion irradiation

被引：59

作者：

Mohanty, T.

Satyam, P. V.

Kanjilal, D.

机构：

[1] Inter Univ Accelerator Ctr, New Delhi 110067, India

[2] Inst Phys, Bhubaneswar 751005, Orissa, India

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2006年 / 6卷 / 08期

关键词：

nanocrystallization; TEM; XRD; optical absorption;

D O I：

10.1166/jnn.2006.532

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nanocrystals of tin oxide were formed in e-beam evaporated films by swift heavy ion (SHI) irradiation. The nucleation of nanocrystals occurred due to electronic excitation by swift heavy ion. Nanophase thin films are characterized systematically by HRTEM, GAXRD, EDX, and UV/VIS absorption techniques. Nanocrystals having size of 8 nm radius are synthesized in different substrates during swift heavy ion irradiation and without subsequent annealing. SHI induced nanocrystallization could be achieved in both crystalline and non-crystalline substrates.

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收藏

页码：2554 / 2559

页数：6

相关论文

共 28 条

[1] Modifying the nanocrystalline characteristics-structure, size, and surface states of copper oxide thin films by high-energy heavy-ion irradiation [J].

Balamurugan, B ;

Mehta, BR ;

Avasthi, DK ;

Singh, F ;

Arora, AK ;

Rajalakshmi, M ;

Raghavan, G ;

Tyagi, AK ;

Shivaprasad, SM .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (06) :3304-3310

[2] Coulomb explosion and thermal spikes [J].

Bringa, EM ;

Johnson, RE .

PHYSICAL REVIEW LETTERS, 2002, 88 (16) :4-165501

[3] Controlling the size, structure and orientation of semiconductor nanocrystals using metastable phase recrystallization [J].

Budai, JD ;

White, CW ;

Withrow, SP ;

Chisholm, MF ;

Zhu, J ;

Zuhr, RA .

NATURE, 1997, 390 (6658) :384-386

[4] Swift heavy ion induced growth of nanocrystalline silicon in silicon oxide [J].

Chaudhari, PS ;

Bhave, TM ;

Kanjilal, D ;

Bhoraskar, SV .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (06) :3486-3489

[5] Insights into microstructural evolution from nanocrystalline SnO2 thin films prepared by pulsed laser deposition -: art. no. 165314 [J].

Chen, ZW ;

Lai, JKL ;

Shek, CH .

PHYSICAL REVIEW B, 2004, 70 (16) :1-7

[6] Partial crystallization of an amorphous alloy by electronic energy deposition [J].

Dunlop, A ;

Jaskierowicz, G ;

Rizza, G ;

Kopcewicz, M .

PHYSICAL REVIEW LETTERS, 2003, 90 (01) :4

[7] Synthesis and luminescence properties of SnO2 nanoparticles [J].

Gu, F ;

Wang, SF ;

Song, CF ;

Lü, MK ;

Qi, YX ;

Zhou, GJ ;

Xu, D ;

Yuan, DR .

CHEMICAL PHYSICS LETTERS, 2003, 372 (3-4) :451-454

[8] Preparation and luminescence characteristics of nanocrystalline SnO2 particles doped with Dy3+ [J].

Gu, F ;

Wang, SF ;

Lü, MK ;

Qi, YX ;

Zhou, GJ ;

Xu, D ;

Yuan, DR .

JOURNAL OF CRYSTAL GROWTH, 2003, 255 (3-4) :357-360

[9] TESTING AND OPERATION OF THE 15UD PELLETRON AT NSC [J].

KANJILAL, D ;

CHOPRA, S ;

NARAYANAN, MM ;

IYER, IS ;

JHA, V ;

JOSHI, R ;

DATTA, SK .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 328 (1-2) :97-100

[10] Electron beam induced crystallization in Fe-doped SnO2 nanoparticles [J].

Lu, B ;

Wang, CS ;

Zhang, YH .

APPLIED PHYSICS LETTERS, 1997, 70 (06) :717-719